View IRFBL10N60A_312846.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 91819C
SMPS MOSFET
IRFBL10N60A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
l
VDSS
600V
Rds(on) max
0.61
ID
11A
Super-D2 PakTM
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
11 7.0 44 180 1.4 30 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Applicable Off Line SMPS Topologies:
l l
Active Clamped Forward Main Switch
Notes
through
are on page 8
www.irf.com
1
2/16/00
IRFBL10N60A
Static @ TJ = 25C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 600 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- V(BR)DSS Typ. --- 0.69 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.61 VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250A 25 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.0 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 18 40 38 35 1895 254 9.2 2560 67 70 Max. Units Conditions --- S VDS = 50V, ID = 6.6A 63 ID = 11A 14 nC VDS = 480V 26 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 11A ns --- RG = 7.5 --- RD = 27,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
454 11 18
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)
Typ.
--- ---
Max.
0.70 40
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 11 --- --- showing the A G integral reverse --- --- 44 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 11A, VGS = 0V --- 585 880 ns TJ = 25C, IF = 11A --- 3.8 5.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFBL10N60A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 11A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
2.0
10
1.5
1.0
TJ = 25 C
0.5
1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFBL10N60A
100000
20
VGS , Gate-to-Source Voltage (V)
10000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 11A VDS = 480V VDS = 300V VDS = 120V
16
C, Capacitance(pF)
Ciss
1000
12
Coss
100
8
10
Crss
4
1 1 10 100 1000
0 0 10 20 30
FOR TEST CIRCUIT SEE FIGURE 13
40 50 60
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
TJ = 150 C
100 10us 10 100us 1ms 1 10ms
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFBL10N60A
12
VDS VGS RG
RD
10
D.U.T.
+
I D , Drain Current (A)
-VDD
8
10V
6
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
VDS 90%
2
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFBL10N60A
1 5V
1000
EAS , Single Pulse Avalanche Energy (mJ)
TOP
800
VDS
L
D R IV E R
BOTTOM
ID 4.9A 7.5A 11A
RG
20V tp
D .U .T
IA S
+ V - DD
600
A
0 .0 1
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D S a v , A v alanc he V olta ge (V )
740
720
Charge
700
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
680
50K 12V .2F .3F
660
D.U.T. VGS
3mA
+ V - DS
640 0 2 4 6 8 10 12
A
I a v , A v alanche Current (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
www.irf.com
IRFBL10N60A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
www.irf.com
7
IRFBL10N60A
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 11A, di/dt 220A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 7.5mH
RG = 25, IAS = 11A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFBL10N60A

	To Download IRFBL10N60A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .